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Gostone

About

About Gostone

Gostone Semiconductor Technology Co., Ltd. was founded in August 2020. We design power semiconductor devices and serve consumer, compute, energy, and industrial customers with market understanding, R&D depth, and supply assurance.

2020.08
Founded
CNY 110M
Registered capital
Shenzhen
Headquarters
6
Power-device platforms

Strengths

What sets us apart

Gostone competes on three capabilities: end-system market experience, an internationally seasoned R&D team, and disciplined supply management.

01
Deep market experience
We work across consumer, compute, energy, and industrial/automotive power uses, and we understand real constraints on efficiency, reliability, and cost so product definition matches volume demand.
02
Strong R&D
The core team comes from international power-semiconductor companies and has long focused on MOSFETs, IGBTs, and related devices. Design, validation, and engineering iteration form a closed loop that keeps raising platform performance and production maturity.
03
Supply management
A stable wafer and packaging partner system protects continuity. Traceable quality and lead-time control from samples to volume support customer qualification and long-term supply.

Business

What we do

Gostone focuses on product definition, design, and volume production of power switches across SGT / Trench MOSFET, CSP, Super Junction, FS-Trench IGBT, and DrMOS platforms, serving efficient and high-reliability power systems with engineering validation and stable supply.

Registered capital CNY 110 million. Headquarters are in Shenzhen. R&D and engineering teams advance platform development and product release together.

Team

R&D capability

Senior engineers have long focused on power devices, with international engineering and volume-production experience.

International power-semiconductor background

Core team members come from international power-semiconductor companies, covering device design, process collaboration, and product engineering — turning advanced structures into manufacturable devices.

The team has long focused on power MOSFETs and IGBTs, understands process windows and reliability constraints, and keeps improving device performance and production consistency.

Seasoned engineering

Senior members have spent years on power-device design and engineering, with end-to-end experience from structure definition and validation through volume introduction.

Long-term focus on power devices (MOSFET / IGBT), supporting platform iteration and customer applications.

R&D

R&D and validation environment

Facilities support device design, test, and engineering validation for platform iteration and device verification.

Gostone R&D center exterior
R&D center exterior
R&D office and design area
Design and engineering office
R&D lab bench
Device test and engineering lab
R&D general laboratory
General laboratory

Milestones

Milestones

  1. 2020
    Company founded; power-device definition and design started
  2. 2021–2022
    SGT / Trench platforms advanced; entered consumer and related markets
  3. 2023
    Expanded into higher-voltage Super Junction products
  4. 2024
    Continued IGBT and DrMOS product-line development
  5. 2025–
    Platform matrix and application coverage keep expanding

Work with Gostone

Contact us about supplier partnerships, technical exchange, or samples — or explore our technology platforms and product portfolio.

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