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Gostone

GD208E

Trench MOSFET·DFN2×3

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Ratings
For first-pass selection.
VDS20 V
VGS max±12 V
RDS(on) max7.2 mΩ
RDS(on) typ6.3 mΩ
ID12 A
Qg typ16 nC
PackageDFN2×3
ConfigurationDual N-channel common-drain
Replacement Reference
  • JSCJ CJCD2003
  • Infineon IRL6297SD
Applications
HandheldsWearablesPower Banks

* Pin-to-pin drop-in: same package and pins; swap in place. Equivalent: solder in place; verify on the board. Functional substitute: needs a layout change or derating. Please refer to the datasheet for the final specification.

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