GD211E

Trench MOSFET·DFN2×3

Ratings

For first-pass selection.

VDS	20 V
VGS max	±12 V
RDS(on) max	15 mΩ
RDS(on) typ	12.3 mΩ
ID	8 A
Qg typ	16 nC
Package	DFN2×3
Configuration	Dual N-Channel Common-Drain
IS	8 A
RSS(on) max	15 mΩ
RSS(on) typ	12.3 mΩ
VSS	20 V

Replacement Reference

JSCJ CJCD2007

Applications

Handhelds Wearables Power Banks

* Pin-to-pin drop-in: same package and pins; swap in place. Equivalent: solder in place; verify on the board. Functional substitute: needs a layout change or derating. Please refer to the datasheet for the final specification.

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